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1/21 february 2005 m40z300 m40z300w 5v or 3v nvram supervisor for up to 8 lpsrams features summary converts low power sram into nvrams precision power monitoring and power switching circuitry automatic write-protection when v cc is out-of-tolerance two-input decoder allows control for up to 8 srams (with 2 devices active in parallel) choice of supply voltages and power-fail deselect voltages: ? m40z300: v cc = 4.5v to 5.5v ths = v ss : 4.5v v pfd 4.75v ths = v out : 4.2v v pfd 4.5v ? m40z300w: v cc = 3.0v to 3.6v ths = v ss : 2.8v v pfd 3.0v v cc = 2.7v to 3.3v ths = v out : 2.5 v pfd 2.7v reset output (rst ) for power on reset battery low pin (bl ) less than 12ns chip enable access propagation delay (for 5.0v device) packaging includes a 28-lead soic and snaphat ? top (to be ordered separately), or a 16-lead soic soic package provides direct connection for a snaphat top which contains the battery figure 1. 16-pin soic package figure 2. 28-pin soic package 16 1 so16 (mq) 28 1 soh28 (mh) snaphat (sh) crystal/battery
m40z300, m40z300w 2/21 table of contents features summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 figure 1. 16-pin soic package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 figure 2. 28-pin soic package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 figure 3. logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 table 1. signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 figure 4. 28-pin soic connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 figure 5. m40z300 16-pin soic connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 figure 6. m40z300w 16-pin soic connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 figure 7. hardware hookup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 two to four decode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 2. truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 figure 8. address-decode time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 data retention lifetime calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 power-on reset output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 battery low pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 v cc noise and negative going transients. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 figure 9. supply voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 maximum rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 3. absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 dc and ac parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 4. dc and ac measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 10.ac testing load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5. capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 6. dc characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 11.power down timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 12.power up timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 7. power down/up mode ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 package mechanical information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 13.soh28 ? 28-lead plastic small outline, 4-socket battery snaphat, package outline. 15 table 8. soh28 ? 28-lead plastic small outline, battery snaphat, package mechanical data 15 figure 14.sh ? 4-pin snaphat housing for 48mah battery, package outline . . . . . . . . . . . . . . . 16 table 9. sh ? 4-pin snaphat housing for 48mah battery, package mechanical data . . . . . . . 16 figure 15.sh ? 4-pin snaphat housing for 120mah battery, package outline . . . . . . . . . . . . . . 17 table 10. sh ? 4-pin snaphat housing for 120mah battery, package mechanical data . . . . . . 17 figure 16.so16 ? 16-lead plastic small outline, 150 mils body width, package outline . . . . . . . . 18 table 11. so16 ? 16-lead plastic small outline, 150 mils body width, package mechanical data 18
3/21 m40z300, m40z300w part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 table 12. ordering information example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 9 table 13. snaphat? battery table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 9 revision history. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 table 14. document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
m40z300, m40z300w 4/21 description the m40z300/w nvram supervisor is a self- contained device which converts a standard low- power sram into a non-volatile memory. a preci- sion voltage reference and comparator monitors the v cc input for an out-of-tolerance condition. when an invalid v cc condition occurs, the condi- tioned chip enable outputs (e1 con to e4 con ) are forced inactive to write-protect the stored data in the sram. during a power failure, the sram is switched from the v cc pin to the lithium cell within the snaphat ? to provide the energy required for data retention. on a subsequent power-up, the sram remains write protected until a valid power condition returns. the 28-pin, 330mil soic provides sockets with gold plated contacts for direct connection to a sep- arate snaphat housing containing the battery. the snaphat housing has gold plated pins which mate with the sockets, ensuring reliable connection. the housing is keyed to prevent im- proper insertion. this unique design allows the snaphat battery package to be mounted on top of the soic package after the completion of the surface mount process which greatly reduces the board manufacturing process complexity of either directly soldering or inserting a battery into a sol- dered holder. providing non-volatility becomes a ?snap.? the 16-pin soic provides battery pins for an external user-supplied battery. insertion of the snaphat housing after reflow prevents potential battery damage due to the high temperatures required for device surface-mount- ing. the snaphat housing is also keyed to pre- vent reverse insertion. the 28-pin soic and battery packages are shipped separately in plastic anti-static tubes or in tape & reel form. for the 28-lead soic, the bat- tery/crystal package (e.g., snaphat) part num- ber is ?m4zxx-br00sh? (see table 13., page 19 ). caution: do not place the snaphat battery top in conductive foam, as this will drain the lithium button-cell battery. figure 3. logic diagram note: 1. for 16-pin soic package only. table 1. signal names note: for m40z300w, b? must be connected to the negative bat- tery terminal only (not to pin 8, v ss ). ai02242 ths v cc m40z300 m40z300w bl v ss e v out b a e1 con e2 con e3 con e4 con rst b + (1) b ? (1) ths threshold select input e chip enable input e1 con - e4 con conditioned chip enable output a, b decoder inputs rst reset output (open drain) bl battery low output (open drain) v out supply voltage output v cc supply voltage v ss ground b + positive battery pin b ? negative battery pin nc not connected internally
5/21 m40z300, m40z300w figure 4. 28-pin soic connections figure 5. m40z300 16-pin soic connections figure 6. m40z300w 16-pin soic connections note: for m40z300w, b? must be connected to the negative bat- tery terminal only (not to pin 8, v ss ). ai02243 8 2 3 4 5 6 7 9 10 11 12 13 14 22 21 20 19 18 17 16 15 28 27 26 25 24 23 1 nc nc bl nc a nc b rst nc nc nc e1 con nc e3 con e e2 con nc nc nc nc ths nc v ss e4 con nc nc v out v cc m40z300 m40z300w ai03624 8 2 3 4 5 6 710 16 15 14 13 12 11 1 a rst b e1 con e e2 con b ? v ss nc v out v cc m40z300 bl ths e3 con e4 con 9 b + ai06350 8 2 3 4 5 6 710 16 15 14 13 12 11 1 a rst b e1 con e e2 con b + v ss nc v out v cc m40z300w bl ths e3 con e4 con 9 b ?
m40z300, m40z300w 6/21 figure 7. hardware hookup note: 1. if the second chip enable pin (e2) is unused, it should be tied to v out . ai02395 v cc e e2 (1) e1 con v ss v out v cc cmos sram 3.0v, 3.3v or 5v ths a 0.1 f 0.1 f m40z300 m40z300w threshold e b e2 con e3 con e4 con rst bl e2 (1) e2 (1) e2 (1) e v cc cmos sram 0.1 f e v cc cmos sram 0.1 f e v cc cmos sram 0.1 f to microprocessor to battery monitor circuit
7/21 m40z300, m40z300w operation the m40z300/w, as shown in figure 7., page 6 , can control up to four (eight, if placed in parallel) standard low-power srams. these srams must be configured to have the chip enable input dis- able all other input signals. most slow, low-power srams are configured like this, however many fast srams are not. during normal operating con- ditions, the conditioned chip enable (e1 con to e4 con ) output pins follow the chip enable (e ) input pin with timing shown in figure 8., page 8 and ta- ble 7., page 14 . an internal switch connects v cc to v out . this switch has a voltage drop of less than 0.3v (i out1 ). when v cc degrades during a power failure, e1 con to e4 con are forced inactive independent of e . in this situation, the sram is unconditionally write protected as v cc falls below an out-of-toler- ance threshold (v pfd ). for the m40z300 the pow- er fail detection value associated with v pfd is selected by the threshold select (ths) pin and is shown in table 6., page 12 . for the m40z300w, the ths pin selects both the supply voltage and v pfd (also shown in table 6., page 12 ). note: in either case, ths pin must be connected to either v ss or v out . if chip enable access is in progress during a power fail detection, that memo ry cycle continues to com- pletion before the memory is write protected. if the memory cycle is not terminated within time t wpt , e1 con to e4 con are unconditionally driven high, write protecting the sram. a power failure during a write cycle may corrupt data at the currently addressed location, but does not jeopardize the rest of the sram's contents. at voltages below v pfd (min), the user can be assured the memory will be write protected within the write protect time (t wpt ) provided the v cc fall time exceeds t f (see figure 8., page 8 ). as v cc continues to degrade, the internal switch disconnects v cc and connects the internal battery to v out . this occurs at the switchover voltage (v so ). below the v so , the battery provides a volt- age v ohb to the sram and can supply current i out2 (see table 6., page 12 ). when v cc rises above v so , v out is switched back to the supply voltage. outputs e1 con to e4 con are held inactive for t cer (120ms maxi- mum) after the power supply has reached v pfd , independent of the e input, to allow for processor stabilization (see figure 12., page 13 ). two to four decode the m40z300/w includes a 2 input (a, b) decoder which allows the control of up to 4 independent srams. the truth table for these inputs is shown in table 2. table 2. truth table inputs outputs e ba e1 con e2 con e3 con e4 con hxxhhhh llllhhh llhhlhh lhlhhlh lhhhhhl
m40z300, m40z300w 8/21 figure 8. address-decode time note: during system design, compliance with the sram timing parameters must comprehend the propagation delay between e1 con - e4 con . data retention lifetime calculation most low power srams on the market today can be used with the m40z300/w nvram supervi- sor. there are, however some criteria which should be used in making the final choice of which sram to use. the sram must be designed in a way where the chip enable input disables all other inputs to the sram. this allows inputs to the m40z300/w and srams to be ?don't care? once v cc falls below v pfd (min). the sram should also guarantee data retention down to v cc = 2.0v. the chip enable access time must be sufficient to meet the system needs with the chip enable propaga- tion delays included. if the sram includes a sec- ond chip enable pin (e2 ), this pin should be tied to v out . if data retention lifetime is a critical parameter for the system, it is important to review the data reten- tion current specifications for the particular srams being evaluated. most srams specify a data retention current at 3.0v. manufacturers gen- erally specify a typical condition for room temper- ature along with a worst case condition (generally at elevated temperatures). the system level re- quirements will determine the choice of which val- ue to use. the data retention current value of the srams can then be added to the i bat value of the m40z300/ w to determine the total current requirements for data retention. the available battery capacity for the snaphat ? of your choice can then be divided by this current to determine the amount of data re- tention available (see table 13., page 19 ). caution: take care to avoid inadvertent dis- charge through v out and e1 con - e4 con after battery has been attached. for a further more detailed review of lifetime calcu- lations, please see application note an1012. power-on reset output all microprocessors have a reset input which forc- es them to a known state when starting. the m40z300/w has a reset output (rst ) pin which is guaranteed to be low within t wpt of v pfd (see 7 ). this signal is an open drain configuration. an ap- propriate pull-up resistor should be chosen to con- trol the rise time. this signal will be valid for all voltage conditions, even when v cc equals v ss . once v cc exceeds the power failure detect volt- age v pfd , an internal timer keeps rst low for t rec to allow the power supply to stabilize. battery low pin the m40z300/w automatically performs battery voltage monitoring upon power-up, and at factory- programmed time intervals of at least 24 hours. the battery low (bl ) pin will be asserted if the battery voltage is found to be less than approxi- mately 2.5v. the bl pin will remain asserted until completion of battery replacement and subse- quent battery low monitoring tests, either during the next power-up sequence or the next scheduled 24-hour interval. if a battery low is generated during a power-up se- quence, this indicates that the battery is below 2.5v and may not be able to maintain data integrity in the sram. data should be considered suspect, and verified as correct. a fresh battery should be installed. if a battery low indication is generated during the 24-hour interval check, this indicates that the bat- tery is near end of life. however, data is not com- promised due to the fact that a nominal v cc is supplied. in order to insure data integrity during subsequent periods of battery back-up mode, the battery should be replaced. the snaphat ? top should be replaced with valid v cc applied to the device. ai02551 a, b e e1 con - e4 con tas tedh tedl
9/21 m40z300, m40z300w the m40z300/w only monitors the battery when a nominal v cc is applied to the device. thus appli- cations which require extensive durations in the battery back-up mode should be powered-up peri- odically (at least once every few months) in order for this technique to be beneficial. additionally, if a battery low is indicated, data integrity should be verified upon power-up via a checksum or other technique. the bl pin is an open drain output and an appropriate pull-up resistor to v cc should be chosen to control the rise time. v cc noise and negative going transients i cc transients, including those produced by output switching, can produce voltage fluctuations, re- sulting in spikes on the v cc bus. these transients can be reduced if capacitors are used to store en- ergy which stabilizes the v cc bus. the energy stored in the bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur. a ceramic by- pass capacitor value of 0.1f (as shown in figure 9. ) is recommended in order to provide the needed filtering. in addition to transients that are caused by normal sram operation, power cycling can generate neg- ative voltage spikes on v cc that drive it to values below v ss by as much as one volt. these negative spikes can cause data corruption in the sram while in battery backup mode. to protect from these voltage spikes, stmicroelectronics recom- mends connecting a schottky diode from v cc to v ss (cathode connected to v cc , anode to v ss ). schottky diode 1n5817 is recommended for through hole and mbrs120t3 is recommended for surface mount. figure 9. supply voltage protection ai00622 v cc 0.1 f device v cc v ss
m40z300, m40z300w 10/21 maximum rating stressing the device above the rating listed in the ?absolute maximum ratings? table may cause permanent damage to the device. these are stress ratings only and operation of the device at these or any other conditions above those indicat- ed in the operating sections of this specification is not implied. exposure to absolute maximum rat- ing conditions for extended periods may affect de- vice reliability. refer also to the stmicroelectronics sure program and other rel- evant quality documents. table 3. absolute maximum ratings note: 1. for so package, standard (snpb) lead finish: reflow at peak temperature of 225c (total thermal budget not to exceed 180 c for between 90 to 150 seconds). 2. for so package, lead-free (pb-free) lead finish: reflow at peak temperature of 260c (total thermal budget not to exceed 245 c for greater than 30 seconds). caution: negative undershoots below ?0.3v are not allowed on any pin while in the battery back-up mode. caution: do not wave solder soic to avoid damaging snaphat sockets. symbol parameter value unit t a ambient operating temperature grade 1 0 to 70 c grade 6 ?40 to 85 c t stg storage temperature snaphat ? ?40 to 85 c soic ?55 to 125 c t sld (1,2) lead solder temperature for 10 seconds 260 c v io input or output voltage ?0.3 to v cc + 0.3 v v cc supply voltage m40z300 ?0.3 to 7.0 v m40z300w ?0.3 to 4.6 v i o output current 20 ma p d power dissipation 1 w
11/21 m40z300, m40z300w dc and ac parameters this section summarizes the operating and mea- surement conditions, as well as the dc and ac characteristics of the device. the parameters in the following dc and ac characteristic tables are derived from tests performed under the measure- ment conditions listed in the relevant tables. de- signers should check that the operating conditions in their projects match the measurement condi- tions when using the quoted parameters. table 4. dc and ac measurement conditions note: output high z is defined as the point where data is no longer driven. figure 10. ac testing load circuit note: 50pf for m40z300w. table 5. capacitance note: 1. sampled only, not 100% tested. 2. at 25c, f = 1mhz. 3. outputs deselected. parameter m40z300 m40z300w v cc supply voltage 4.5 to 5.5v 2.7 to 3.6v ambient operating temperature grade 1 0 to 70c 0 to 70c grade 6 ?40 to 85c ?40 to 85c load capacitance (c l ) 100pf 50pf input rise and fall times 5ns 5ns input pulse voltages 0 to 3v 0 to 3v input and output timing ref. voltages 1.5v 1.5v ai02393 c l = 100pf or 50pf c l includes jig capacitance 333 ? device under test 1.73v symbol parameter (1,2) min max unit c in input capacitance 8 pf c out (3) input/output capacitance 10 pf
m40z300, m40z300w 12/21 table 6. dc characteristics note: 1. valid for ambient operating temperature: t a = 0 to 70c or ?40 to 85c; v cc = 2.7 to 3.6v or 4.5 to 5.5v(except where noted). 2. outputs deselected. 3. for rst & bl pins (open drain). 4. chip enable outputs (e1 con - e4 con ) can only sustain cmos leakage currents in the battery back-up mode. higher leakage currents will reduce battery life. 5. measured with v out and e1 con - e4 con open. sym parameter test condition (1) m40z300 m40z300w unit min typ max min typ max i li (2) input leakage current 0v v in v cc 1 1 a i cc supply current outputs open 3 6 2 4 ma v il input low voltage ?0.3 0.8 ?0.3 0.8 v v ih input high voltage 2.2 v cc + 0.3 2.0 v cc + 0.3 v v ol output low voltage i ol = 4.0ma 0.4 0.4 v output low voltage (open drain) (3) i ol = 10ma 0.4 0.4 v v oh output high voltage i oh = ?2.0ma 2.4 2.4 v v ohb v oh battery back-up (4) i out2 = ?1.0a 2.0 2.9 3.6 2.0 2.9 3.6 v i out1 v out current (active) v out > v cc ?0.3 250 150 ma v out > v cc ?0.2 150 100 ma i out2 v out current (battery back-up) v out > v bat ?0.3 100 100 a i ccdr data retention mode current (5) 100 100 na ths threshold select voltage v ss v out v ss v out v v pfd power-fail deselect voltage (ths = v ss ) 4.5 4.6 4.75 2.8 2.9 3.0 v power-fail deselect voltage (ths = v out ) 4.2 4.35 4.5 2.5 2.6 2.7 v v so battery back-up switchover voltage 3.0 2.5 v v bat battery voltage 2.0 2.9 3.6 2.0 2.9 3.6 v
13/21 m40z300, m40z300w figure 11. power down timing figure 12. power up timing ai02398b v cc e e1 con - e4 con tf tfb v ohb v pfd (max) v pfd (min) v so twpt v pfd rst ai02399b v cc e e1 con - e4 con tr tcer v ohb v pfd (max) v pfd (min) v so v pfd tedl tedh rst trec trb
m40z300, m40z300w 14/21 table 7. power down/up mode ac characteristics note: 1. valid for ambient operating temperature: t a = 0 to 70c or ?40 to 85c; v cc = 2.7 to 3.6v or 4.5 to 5.5v(except where noted). 2. v pfd (max) to v pfd (min) fall time of less than tf may result in deselection/write protection not occurring until 200 s after v cc passes v pfd (min). 3. v pfd (min) to v ss fall time of less than t fb may cause corruption of ram data. 4. t rec (min) = 20ms for industrial temperature grade 6 device. symbol parameter (1) min max unit t f (2) v pfd (max) to v pfd (min) v cc fall time 300 s t fb (3) v pfd (min) to v ss v cc fall time m40z300 10 s m40z300w 150 s t r v pfd (min) to v pfd (max) v cc rise time 10 s t edl chip enable propagation delay low m40z300 12 ns m40z300w 20 ns t edh chip enable propagation delay high m40z300 10 ns m40z300w 20 ns t as a, b set up to e 0ns t cer chip enable recovery 40 120 ms t rec (4) v pfd (max) to rst high 40 120 ms t wpt write protect time m40z300 40 150 s m40z300w 40 250 s t rb v ss to v pfd (min) v cc rise time 1s
15/21 m40z300, m40z300w package mechanical information figure 13. soh28 ? 28-lead plastic small outline, 4-socket battery snaphat, package outline note: drawing is not to scale. table 8. soh28 ? 28-lead plastic small outline, battery snaphat, package mechanical data symbol mm inches typ min max typ min max a 3.05 0.120 a1 0.05 0.36 0.002 0.014 a2 2.34 2.69 0.092 0.106 b 0.36 0.51 0.014 0.020 c 0.15 0.32 0.006 0.012 d 17.71 18.49 0.697 0.728 e 8.23 8.89 0.324 0.350 e1.27? ?0.050? ? eb 3.20 3.61 0.126 0.142 h 11.51 12.70 0.453 0.500 l 0.41 1.27 0.016 0.050 0 8 0 8 n 28 28 cp 0.10 0.004 soh-a e n d c l a1 1 h a cp be a2 eb
m40z300, m40z300w 16/21 figure 14. sh ? 4-pin snaphat housing for 48mah battery, package outline note: drawing is not to scale. table 9. sh ? 4-pin snaphat housing for 48mah battery, package mechanical data symbol mm inches typ min max typ min max a 9.78 0.385 a1 6.73 7.24 0.265 0.285 a2 6.48 6.99 0.255 0.275 a3 0.38 0.015 b 0.46 0.56 0.018 0.022 d 21.21 21.84 0.835 0.860 e 14.22 14.99 0.560 0.590 ea 15.55 15.95 0.612 0.628 eb 3.20 3.61 0.126 0.142 l 2.03 2.29 0.080 0.090 shzp-a a1 a d e ea eb a2 b l a3
17/21 m40z300, m40z300w figure 15. sh ? 4-pin snaphat housing for 120mah battery, package outline note: drawing is not to scale. table 10. sh ? 4-pin snaphat housing for 120mah battery, package mechanical data symbol mm inches typ min max typ min max a 10.54 0.415 a1 8.00 8.51 0.315 .0335 a2 7.24 8.00 0.285 0.315 a3 0.38 0.015 b 0.46 0.56 0.018 0.022 d 21.21 21.84 0.835 0.860 e 17.27 18.03 0.680 0.710 ea 15.55 15.95 0.612 0.628 eb 3.20 3.61 0.126 0.142 l 2.03 2.29 0.080 0.090 shzp-a a1 a d e ea eb a2 b l a3
m40z300, m40z300w 18/21 figure 16. so16 ? 16-lead plastic small outline, 150 mils body width, package outline note: drawing is not to scale. table 11. so16 ? 16-lead plastic small outline, 150 mils body width, package mechanical data symbol mm inches typ. min. max. typ. min. max. a 1.75 0.069 a1 0.10 0.25 0.004 0.010 a2 1.60 0.063 b 0.35 0.46 0.014 0.018 c 0.19 0.25 0.007 0.010 d 9.80 10.00 0.386 0.394 e 3.80 4.00 0.150 0.158 e1.27??0.050?? h 5.80 6.20 0.228 0.244 l 0.40 1.27 0.016 0.050 0 8 0 8 n16 16 cp 0.10 0.004 so-b e n cp b e a2 d c l a1 h a 1
19/21 m40z300, m40z300w part numbering table 12. ordering information example note: 1. the soic package (soh28) requires the battery package (snaphat ? ) which is ordered separately under the part number ?m4zxx-br00sh? in plastic tube or ?m4zxx-br00shtr? in tape & reel form. caution : do not place the snaphat battery package ?m4zxx-br00sh? in conductive foam as it will drain the lithium button-cell battery. for other options, or for more information on any aspect of this device, please contact the st sales office nearest you. table 13. snaphat ? battery table example: m40z 300w mh 1 tr device type m40z supply and write protect voltage 300 = v cc = 4.5 to 5.5v ths = v ss = 4.5v v pfd 4.75v ths = v out = 4.2v v pfd 4.5v 300w = v cc = 3.0 to 3.6v ths = v ss = 2.8v v pfd 3.0v v cc = 2.7v to 3.3v ths = v out = 2.5v v pfd 2.7v package mh (1) = soh28 mq = so16 temperature range 1 = 0 to 70c 6 = ?40 to 85c shipping method for soic blank = tubes tr = tape & reel part number description package m4z28-br00sh lithium battery (48mah) snaphat sh m4z32-br00sh lithium battery (120mah) snaphat sh
m40z300, m40z300w 20/21 revision history table 14. document revision history date version revision details march 1999 1.0 first issue 08-mar-00 1.1 document layout changed; so16 package added; battery capacity changed (table 13 ) 22-sep-00 1.2 so16 package measures change 23-feb-01 1.3 added information for industrial temperature (table 3 , 7 , 12 ) 30-may-01 1.4 change ?controller? references to ?supervisor? 10-jul-01 2.0 reformatted; added temp/voltage info. to tables (table 6 , 7 ); figures changed (figures 3 , 5 , 7 , 10 , 8 ) 01-aug-01 2.1 e2 connections added to hookup (figure 7 ) 15-jan-02 2.2 16-pin soic connections split, graphic added (figure 6 ); addition to hardware hookup (figure 7 ) 13-may-02 2.3 modify reflow time and temperature footnote (table 3 ) 31-oct-03 2.4 update dc characteristics (table 6 ) 04-nov-03 2.5 correct dc characteristics (table 6 ) 23-feb-05 3.0 reformatted; ir reflow, so package updates (table 3 )
21/21 m40z300, m40z300w information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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